| 1. | Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
衬底偏压对四面体非晶碳膜结构和性能的影响 |
| 2. | Moreover , high quality nanocrystalline p - sic film was attained with the integration of the pre - carbonization process and the substrate bias effect
进一步结合衬底预碳化以及对衬底的偏压作用，得到了高质量的纳米? sic薄膜。 |
| 3. | In this paper , the nucleation process of diamond by filament cvd was analyzed , and enhanced flux of ions by negative substrate bias was investigated in theory
摘要木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。 |
| 4. | The main process parameters include hydrogen content in the gas sources , hydrogen plasma catalyst pretreatment , substrate bias , deposition temperature and plasma flow guiding
主要之制程参数包括气源中之氢气含量、氢电浆前处理、基材偏压、沉积温度以及电浆导流板之施加。 |
| 5. | In the paper , the effect of ion bombarding on nucleation of diamond by negative substrate bias - enhanced was investigated in theory , and some experimental phenomena were explained
摘要从理论上研究了负衬底偏压增强离子轰击对金刚石核化的影响，并用理论解释了一些实验现象。 |
| 6. | The influence of various factors , such as substrate bias voltage and temperature , working gas pressure , types of si wafer , etc . on the preparation of cbn has been studied systematically
系统地研究了衬底偏压、衬底温度、工作气压、 si晶片的类型等多种因素对制备cbn薄膜的影响。 |
| 7. | Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
采用分步偏压辅助射频( rf )溅射法在316l不锈钢表面制备了sic薄膜。扫描电镜( sem )观察表明膜致密、均匀、与基体结合牢固。 |
| 8. | It also shows that hardness increases with the increase of film thickness , substrate temperature and substrate bias . and among these processing parameters , the substrate temperature and bias have the more prominent influences
同时，随着膜厚的增加，基片温度的提高以及对基片施加的偏压的增高，薄膜的硬度都有不同程度的提高。 |
| 9. | The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique . meanwhile , the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解决了采用pecvd法低温制备? sic薄膜中的含氢问题；同时，采用偏压辅助的技术，进一步解决了薄膜中的含氧问题。 |
| 10. | 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
研究了衬底负偏压和射频功率对制备立方氮化硼薄膜的影响立方氮化硼薄膜沉积在p型si （ 100 ） （ 8 15 cm ）衬底上，靶材为h - bn靶（纯度达99 . 99 ） ，溅射气体为氩气和氮气混合而成，制样过程中，衬底加直流负偏压。 |
